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XP3N1R8MT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3N1R8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – XP3N1R8MT

Datasheet Details

Part number XP3N1R8MT
Manufacturer YAGEO
File Size 361.16 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3N1R8MT Datasheet
Additional preview pages of the XP3N1R8MT datasheet.

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Full PDF Text Transcription

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XP3N1R8MT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Ultra Low On-resistance G ▼ RoHS Compliant & Halogen-Free S Description XP3N1R8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) ID4 30V 1.
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