• Part: XP1504M
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 245.93 KB
Download XP1504M Datasheet PDF
YAGEO
XP1504M
Description XP1504 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 150V 59mΩ 4.5A D Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Drain-Source Voltage Gate-Source Voltage +20 ID@TA=25℃ Drain Current, VGS @ 10V3 ID@TA=70℃ Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3...