• Part: XP12NB4R4CMT
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 325.13 KB
Download XP12NB4R4CMT Datasheet PDF
YAGEO
XP12NB4R4CMT
Description XP12NB4R4C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 120V 4.4mΩ PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ Drain Current, VGS @ 10V6(Silicon Limited) ID@TC=25℃ Drain Current, VGS @ 10V6(Package Limited) ID@TA=25℃ Drain Current, VGS @ 10V3 ID@TA=70℃ Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TC=25℃ PD@TA=25℃ EAS Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche...