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XP09T10GK - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP09T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP09T10GK
Manufacturer YAGEO
File Size 182.57 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP09T10GK Datasheet

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Full PDF Text Transcription

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XP09T10GK Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Halogen Free & RoHS Compliant Product S Description XP09T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. BVDSS RDS(ON) ID 100V 300mΩ 2.
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