• Part: VSMT260P04NA1
  • Description: -40V P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Xirun
  • Size: 2.58 MB
Download VSMT260P04NA1 Datasheet PDF
Xirun
VSMT260P04NA1
Features - 40V - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 26 mΩ 32 mΩ Description The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack PDFN3- 3-8L Marking Qty(PCS) VSMT260P04N XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance...