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VSMT260P04NA1 - -40V P-Channel Enhancement Mode MOSFET

General Description

The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS ID - 40V - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 26 mΩ 32 mΩ.

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Datasheet Details

Part number VSMT260P04NA1
Manufacturer Xirun
File Size 2.58 MB
Description -40V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet VSMT260P04NA1 Datasheet

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VSMT260P04NA1 -40V P-Channel Enhancement Mode MOSFET General Features VDS ID - 40V - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 26 mΩ 32 mΩ Description The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.