• Part: VSMT150P03DA1
  • Description: -30V P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Xirun
  • Size: 1.99 MB
Download VSMT150P03DA1 Datasheet PDF
Xirun
VSMT150P03DA1
Features - 30V - 30A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 15 mΩ 23 mΩ Description The VSMT150P03DA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack TO-252-3L Marking VSM T150P03D XXX YYYY Qty(PCS) 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 EAS PD@TC=25℃ Single Pulse Avalanche Energy3 Total Power Dissipation4 TSTG Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient...