• Part: VSMT056P03VA1
  • Description: -30V P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Xirun
  • Size: 2.30 MB
Download VSMT056P03VA1 Datasheet PDF
Xirun
VSMT056P03VA1
Features - 30V - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 5.6 mΩ 8.0 mΩ Description The VSMT056P03VA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack SOP-8L Marking VSM T056P03V XXX YYYY Qty(PCS) 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1...