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XNA6N60T - Trench-FS IGBT

Datasheet Summary

Features

  • Advanced Trench+FS (Field Stop) IGBT technology.
  • Low Collector-Emitter Saturation voltage, typical data is 2.1V @ 6A.
  • Easy parallel switching capability due to positive Temperature coefficient in Vce.
  • 10uS Short-Circuit.
  • Fast switching.
  • High input impedance.
  • Pb- Free product Schematic Diagram.

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Datasheet Details

Part number XNA6N60T
Manufacturer Xiner
File Size 177.00 KB
Description Trench-FS IGBT
Datasheet download datasheet XNA6N60T Datasheet
Additional preview pages of the XNA6N60T datasheet.

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Xiner XNA6N60T 600V，6A，Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typical data is 2.1V @ 6A.  Easy parallel switching capability due to positive Temperature coefficient in Vce.  10uS Short-Circuit  Fast switching  High input impedance  Pb- Free product Schematic Diagram Applications  Home applications  Intelligent power module. D2pak Symbol V(BR)CES VCE(sat) VGE(th) VF IGES IGESR ICES Electrical characteristics(TJ = 25°C unless otherwise noted) Parameter Collector - Emitter breakdown voltage Collector-Emitter Saturation voltage Gate threshold voltage Diode forward voltage Gate to Emitter Forward Leakage Gate to Emitter reverse Leakage Zero gate voltage collector current Test conditions Units Min.
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