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20CZ16 - High Speed NOVRAM

General Description

The Xicor X20CZ16 is a 2K x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (EEPROM).

The X20CZ16 is fabricated with advanced CMOS floating gate technology to achieve high speed with low power and wide power-supply margin.

Key Features

  • Fast access time: 35ns.
  • High reliability.
  • Endurance: 105 nonvolatile store operations.
  • Retention: 10 years minimum.
  • Power-on recall.
  • EEPROM data automatically recalled into RAM upon power-up.
  • Low power CMOS.
  • Standby: 1mA.
  • Infinite EEPROM array recall, and RAM read and write cycles.
  • Hardware store initiation (store cycle time < 10ms).
  • Available in the 32-lead plastic leadless chip carrier package DESCRI.

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Datasheet Details

Part number 20CZ16
Manufacturer Xicor
File Size 517.46 KB
Description High Speed NOVRAM
Datasheet download datasheet 20CZ16 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com APPLICATION NOTE A V A I LABLE AN56 High Speed NOVRAM FEATURES • Fast access time: 35ns • High reliability —Endurance: 105 nonvolatile store operations —Retention: 10 years minimum • Power-on recall —EEPROM data automatically recalled into RAM upon power-up • Low power CMOS —Standby: 1mA • Infinite EEPROM array recall, and RAM read and write cycles • Hardware store initiation (store cycle time < 10ms) • Available in the 32-lead plastic leadless chip carrier package DESCRIPTION X20CZ16 The Xicor X20CZ16 is a 2K x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (EEPROM). The X20CZ16 is fabricated with advanced CMOS floating gate technology to achieve high speed with low power and wide power-supply margin.