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Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK212
Xiaosheng
D Symbol
Applications For charge sensor, meter amplifier circuit,
rheostat , chopper and gain controller for AGC, electronic switch.
FM/VHF tuners in car radios
Electrical characteristics (Ta=25℃)
SG
Packag
1-Drain 2-Source 3-Gate TO-92 or TO-92s
Parameter Drain to Source Voltage Gate to Drain ( Source) Voltage Gate to Source Cut-off Voltage Gate to Source Reverse Current Saturation Drain Current Forward transfer admittance
Symbl
Conditions
min typ max unit
BVDS IDS= 1uA
20
V
VGD(S) IGS= -1uA
-20
V
VGS(off) VDS=10V IDS=1uA -0.3
-2.5 V
IGSS VDS=0VVGS=-10V
-1.0 nA
IDSS VDS=10V VGS=0V 0.6
12 mA
|Yfs| VDS=10V VGS=0V 2.
2SK212 Datasheet