XR4953B
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z Green Device Available
Applications z Power management in half bridge and inverters z DC-DC Converter z Load Switch
General Description
The XR4953B is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The XR4953B meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Product Summary
BVDSS -20V
RDSON 55mΩ
SOP-8 Pin Configuration
ID -5 A
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM PD@TC=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol...
