XR4435B
Description
The XR4435B is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The XR4435B meet the Ro HS and Green Product requirement
SOP8 Pin Configuration
ID -10.0A
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Symbol VDSS VGSS
PD RθJA TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA= 25℃ TA = 100℃
Pulsed Drain Current note1
Single Pulsed Avalanche Energy note2
Power Dissipation
TA = 25℃
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Max.
-30 ±20 -10 -7.0 -36 25 3.5 48 -55 to +150
Units
V V A A A m J W ℃/W ℃
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P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Off Characteristic
V(BR)DSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to...
