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FH3204G - N-Channel Enhancement Mode Power MOSFET

General Description

The FH3204G uses advanced Shielded Gate trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Motor drivers Power switching application DC/DC Converters In Computing Isolated DC/DC Convert

Key Features

  • VDSS 40V ID 120A RDS(ON) MAX 1.6mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation 1 G FH3204.
  • Schematic diagram Marking and pin Assignment PDFN5X6-8L top and bottom view Limiting Values Symbol Parameter Conditions VDS VGS ID.
  • IDM.
  • ,.
  • Ptot.
  • Tstg Drain.

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Datasheet Details

Part number FH3204G
Manufacturer XIN FEI HONG
File Size 2.48 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet FH3204G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FH3204G SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Enhancement Mode Power MOSFET Description The FH3204G uses advanced Shielded Gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Motor drivers ● Power switching application ● DC/DC Converters In Computing ● Isolated DC/DC Converters In Telecom and Industrlal General Features VDSS 40V ID 120A RDS(ON) MAX 1.