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PTRA087008NB - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTRA087008NB is a 650-watt LDMOS FET.

It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz.

Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching.
  • Asymmetric design - Main: P1dB = 245 W Typ - Peak: P1dB = 380 W Typ.
  • Typical pulsed CW performance, 805 MHz, 48 V, Doherty configuration - Output power at P3dB = 650 W - Efficiency = 52% - Gain = 19.5 dB.
  • Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power.
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001).
  • Integrated ESD protection.
  • Low thermal resistance.
  • RoHS-c.

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Datasheet Details

Part number PTRA087008NB
Manufacturer Wolfspeed
File Size 724.77 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA087008NB Datasheet
Additional preview pages of the PTRA087008NB datasheet.

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Full PDF Text Transcription

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PTRA087008NB Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Description The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, ƒ = 805 MHz. 3GPP WCDMA signal, 10 dB PAR, 24 3.84 MHz bandwidth 60 Efficiency 20 40 16 Gain 20 12 0 8 PAR @ 0.
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