Datasheet4U Logo Datasheet4U.com

PTRA082808NF - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTRA082808NF is a 280-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 790 to 820 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 1.0 V, ƒ = 820 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 Gain 20 20 16 0 12 -20 8 -40 4 PAR @ 0.01% CCDF.

📥 Download Datasheet

Datasheet preview – PTRA082808NF

Datasheet Details

Part number PTRA082808NF
Manufacturer Wolfspeed
File Size 483.72 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA082808NF Datasheet
Additional preview pages of the PTRA082808NF datasheet.
Other Datasheets by Wolfspeed

Full PDF Text Transcription

Click to expand full text
PTRA082808NF Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 1.0 V, ƒ = 820 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 Gain 20 20 16 0 12 -20 8 -40 4 PAR @ 0.
Published: |