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PTFC270101M - High Power RF LDMOS Field Effect Transistor

Description

t 2700 MHz.

This LDMOS transistor offers excellent gain, efficiency c and linearity performance in a small overmolded plastic package.

Features

  • Unmatched input and output.
  • Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60%.
  • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR =.
  • 44.9 dBc @ 5 MHz.
  • Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power.
  • Integrated ESD protection.
  • Pb-free and RoHS compliant dis RF Characteristics Two-carrier.

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Datasheet preview – PTFC270101M

Datasheet Details

Part number PTFC270101M
Manufacturer Wolfspeed
File Size 1.44 MB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFC270101M Datasheet
Additional preview pages of the PTFC270101M datasheet.

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Full PDF Text Transcription

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PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to t 2700 MHz. This LDMOS transistor offers excellent gain, efficiency c and linearity performance in a small overmolded plastic package. PTFC270101M Package PG-SON-10 Gain (dB) Drain Efficiency (%) du Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, o 3GPP WCDMA signal, 8 dB PAR, r 10 MHz carrier spacing, 3.84 MHz bandwidth 23 70 p 22 60 Gain d 21 50 e 20 40 u 19 30 in 18 20 t Efficiency 17 10 n 16 c270101m-2.
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