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CPW4-1200-S002B - Gen 4 Silicon Carbide Schottky Diode

Description

This is the 4th generation of high voltage, high performance Z-Rec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design.

Features

  • 1200V Schottky Rectifier.
  • Zero Reverse Recovery.
  • Zero Forward Recovery.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF Package Type: Bare Die PN’s: CPW4-1200-S002B.

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CPW4-1200-S002B. 1 CPW4-1200-S002B Gen 4 Silicon Carbide Schottky Diode Description This is the 4th generation of high voltage, high performance Z-Rec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this Schottky diode ideal for high frequency switching applications including solar inverter and motor drives. This Schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier.
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