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CGH55015P2 - GaN HEMT

Download the CGH55015P2 datasheet PDF. This datasheet also covers the CGH55015F2 variant, as both devices belong to the same gan hemt family and are provided as variant models within a single manufacturer datasheet.

General Description

Wolfspeed's CGH55015F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/P2 ideal for C-band pulsed or CW saturated amplifiers.

Key Features

  • 4.5 to 6.0 GHz Operation.
  • 12 dB Small Signal Gain at 5.65 GHz.
  • 13 W typical PSAT.
  • 60% Efficiency at PSAT.
  • 28 V Operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CGH55015F2-Wolfspeed.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Wolfspeed

Part Number Description
CGH55015P1 GaN HEMT
CGH55015F2 GaN HEMT
CGH55030F1 GaN HEMT
CGH09120F GaN HEMT
CGH21120F GaN HEMT
CGH21240F GaN HEMT
CGH27015 GaN HEMT
CGH27030 GaN HEMT
CGH27030S GaN HEMT
CGH27060F GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGH55015F2/P2 10 W, C-Band, Unmatched, GaN HEMT Description Wolfspeed's CGH55015F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screwdown, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F2/P2 is suitable for applications up to 6 GHz. Package Types: 440196 & 440166 PNs: CGH55015P2 & CGH55015F2 Features • 4.5 to 6.0 GHz Operation • 12 dB Small Signal Gain at 5.