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CAS480M12HM3
1200 V, 480 A, Silicon Carbide, Half-Bridge Module
VDS
1200 V
IDS
480 A
5
4
3
2
1
Technical Features
• Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation
SiC MOSFET Technology
• Zero Reverse Recovery from Diodes • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator
D
V+
G1 K1
Mid
NTC1
G2 K2
-t°
C
NTC2
V-
Typical Applications • Railway, Traction, and Motor Drives • EV Chargers • High-Efficiency Converters/Inverters • Renewable Energy • Smart-Grid/Grid-Tied Distributed Generation
1
System Benefits
• •
EInncarbealesseCdoBSmyspteamct,ELfifgichitewneciyg,hdtuSeytsoteLm45ows Switching &2
Conduction Losses of SiC
• Reduced Thermal Requirements an