Datasheet Details
| Part number | C4D30120H |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 817.15 KB |
| Description | 30A Silicon Carbide Schottky Diode |
| Datasheet |
 C4D30120H Datasheet
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| Part number | C4D30120H |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 817.15 KB |
| Description | 30A Silicon Carbide Schottky Diode |
| Datasheet |
C4D30120H Datasheet
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With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway.
In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
C4D30120H 4th Generation 1200 V, 30 A Silicon Carbide Schottky.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
C4D30120D | Silicon Carbide Schottky Diode | Cree |
| Part Number | Description |
|---|---|
| C4D30120D | 30A Silicon Carbide Schottky Diode |
| C4D02120A | 2A Silicon Carbide Schottky Diode |
| C4D02120E | 2A Silicon Carbide Schottky Diode |
| C4D05120A | 5A Silicon Carbide Schottky Diode |
| C4D05120E | 5A Silicon Carbide Schottky Diode |
| C4D08120A | 8A Silicon Carbide Schottky Diode |
| C4D08120E | 8A Silicon Carbide Schottky Diode |
| C4D10120A | 10A Silicon Carbide Schottky Diode |
| C4D10120D | 10A Silicon Carbide Schottky Diode |
| C4D10120E | 10A Silicon Carbide Schottky Diode |