WSR10N65F
Description
The WSR10N65F is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The WSR10N65F meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 650V
RDSON 600mΩ
ID 10A
Applications z AC/DC Power Conversion in Switched Mode Power Supplies (SMPS). z Uninterruptible Power Supply(UPS) z Adapter.
TO-220F-3L Pin Configuration
(2) D (1) G
S (3)
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS PD TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1.5 Continuous Drain Current, VGS @ 10V1.5 Pulsed Drain Current1.2.5 Single Pulse Avalanche Energy1 Total Power Dissipation1,5 Storage...
