WSP4882 - Dual N-Channel MOSFET

Winsok

General Description

The WSP4882 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .

Key Features

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 20mΩ ID 8.0A.

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WSP4882 dual n-channel mosfet by Winsok - Datasheet Preview

Datasheet Details

Part number	WSP4882
Manufacturer	Winsok
File Size	2.20 MB
Description	Dual N-Channel MOSFET
Datasheet	WSP4882 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WSP4882 Dual N-Channel MOSFET General Description The WSP4882 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The WSP4882 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 20mΩ ID 8.