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WSD8823DN22 - P-Channel MOSFET

General Description

WSD8823DN22 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode.

the tiny and thin outline saves PCB consumption.

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Datasheet Details

Part number WSD8823DN22
Manufacturer Winsok
File Size 732.67 KB
Description P-Channel MOSFET
Datasheet download datasheet WSD8823DN22 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description WSD8823DN22 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption. Applications z Bidirectional blocking switch; z DC-DC conversion applications; z Li-battery charging; Schottky VR VF IO 20V 410mV@1A 2A WSD8823DN22 P-Ch MOSFET Product Summery VDSS -20V RDSON(typ.) 60mΩ@-4.5V 75mΩ@-2.5V 105mΩ@-1.8V ID -3.4A DFN2X2-6L Pin Configuration Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Noted) Symbol VDS VGS ID@Tc=25℃ IDM VR IF PD TSTG,TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = -4.5V1 300μS Pulsed Drain Current, (VGS =-4.