WFJ8N65B - Power MOSFET

Product Overview

Winsemi

Part number	WFJ8N65B
Manufacturer	Winsemi
File Size	387.99 KB
Description	Power MOSFET
Datasheet	WFJ8N65B Datasheet
Additional preview pages of the WFJ8N65B datasheet.

This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology.

7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V.
Ultra-low Gate charge(Typical 25nC).
Fast Switching Capability.
100%Avalanche Tested.
Isolation Voltage (VISO=4000V AC).
Maximum Junction Temperature Range(150℃) WFJ8N65B Silicon N-Channel MOSFET General.

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Published: Mar 27, 2017 |