SFP50N06 - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources.

Key Features

RDS(on)(Max 22mΩ)@VGS=10V.
Ultra-low Gate Charge(Typical 31nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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SFP50N06 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	SFP50N06
Manufacturer	Winsemi
File Size	476.93 KB
Description	Silicon N-Channel MOSFET
Datasheet	SFP50N06 Datasheet

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SFP50N06 Silicon N-Channel MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.