SFD6113AT
Description
Silicon P-Channel MOSFET
Features
- -60V, -13A
- RDS(ON) = 90mΩ (Max.) @ VGS = -10V, ID = -10A
- Green Device Available
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- Advanced high cell density Trench technology
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible Power Supply
Package
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current note1
IDM EAS PD RθJC
Pulsed Drain Current note2 Single Pulsed Avalanche Energy note3 Power Dissipation note4 Thermal Resistance, Junction to Case
TJ, TSTG Operating and Storage Temperature Range
- Drain current limited by maximum junction temperature
TC = 25℃ TC = 100℃
TC = 25℃
Max.
-60 ± 20 -13 -8.3 -26 29.8 31.1
4 -55 to +175
Units
V V A A A m J W ℃/W ℃
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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