D717
DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL PARAMETER Collector-emitter voltage peak value VCBO Collector-emitter voltage (open base) VCEO Collector current (DC) IC .. Collector current peak value ICM Total power dissipation Ptot Collector-emitter saturation voltage VCEsat Diode forward voltage VF Fall time tf CONDITIONS VBE = 0V
TO-3P(I)D
TYP MAX 70 70 10 80 2 2.0 1.0UNIT V V A A W V V s
Tmb 25 IC = 4.0A; IB=0.4A IF = 3.5A IC=4A,IB1=-IB2=0.4A,VCC=30V
1.5 0.4
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55
- Tmb 25
MAX 70 70 5 10 2.5 80 150 150
UNIT V V V A A...
