S8550LT1 - HIGH VOLTAGE TRANSISTOR

Features

Die Size 0.44.
0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP.

Wing Shing Computer Components

Datasheet Details

Part number	S8550LT1
Manufacturer	Wing Shing Computer Components
File Size	85.70 KB
Description	HIGH VOLTAGE TRANSISTOR
Datasheet	S8550LT1 Datasheet
Additional preview pages of the S8550LT1 datasheet.

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S8550 - TRANSISTOR

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S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown voltage voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1） Test conditions Ic= 100µA , IE=0 Ic= 1 mA，IB=0 IE= 100µA，IC=0 VCB= 30V , IE=0 VEB= 5V，IC=0 VCE= 1V, IC= 150mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50 mA IC= 500mA, IB= 50 mA IC= 10mA, VCE =1V MIN 30 21 5.0 TYP MAX UNIT V V V Collector-emitter breakdown Emitter-base breakdown current current voltage Collector cut-off Emitter cut-off 1.0 100 120 40 500 1.2 1.

Published: May 17, 2005 |