D716
DESCRIPTION
SILICON EPITAXIAL PLANAR TRANSISTOR
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
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QUICK REFERENCE DATA
SYMBOL
TO-3P(I)D
CONDITIONS VBE = 0V MIN
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 3.0A; IB = 0.3A IF = 3.0A
MAX 100 100 6 60 2 2.0
- UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55
- Tmb 25
MAX 100 100 5 6 1.5 60 150 150
UNIT V V V A A W
ELECTRICAL...
