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2SB595
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
!
Complement to 2SD525
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -100 -100 -5 -5 40 150 -50~150 Unit V V V A W
℃ ℃
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= -100V , IE=0 VEB=- 5V , IC=0 VCE= -5V , IC=-1A IC=-4A , IB=-0.4A VCE= -5V , IC=-0.5A Min Typ Max -10 10 320 -2.
B595 Datasheet
