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PFJ60R180 / PFW60R180
PFJ60R180 / PFW60R180
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS
BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A
Drain
Gate
●
◀▲
● ●
Source
TO-247
TO-3P
APPLICATION
Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS)
1 2 3
1.Gate 2. Drain 3. Source
1 2 3
1.Gate 2. Drain 3.