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PFU3N80EG - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V  Halogen Free.

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Datasheet Details

Part number PFU3N80EG
Manufacturer Wing On
File Size 818.17 KB
Description N-Channel MOSFET
Datasheet download datasheet PFU3N80EG Datasheet

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Full PDF Text Transcription

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PFU3N80EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFU3N80EG 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 4.0 Ω ID = 2.5 A Drain  Gate  ● ◀▲ ● ●  Source I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3.
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