Datasheet4U Logo Datasheet4U.com

PFP65R900 - N-Channel Super Junction MOSFET

Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS.

📥 Download Datasheet

Datasheet Details

Part number PFP65R900
Manufacturer Wing On
File Size 1.09 MB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFP65R900 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PFP DIN Rail Mounting Track Omron Electronics
PFP13N50 500V N-Channel MOSFET Power Device
PFP18N50 500V N-Channel MOSFET Power Device
PFP3205 N-channel Power MOSFET PowerGate
PFP4N60 N-channel MOSFET PowerGate

Other Datasheets by Wing On

Part Number Description
PFP65R180 N-Channel Super Junction MOSFET
PFP65R380 N-Channel Super Junction MOSFET
PFP65R540 N-Channel Super Junction MOSFET
PFP65T260 N-Channel Super Junction MOSFET
PFP65T360 N-Channel Super Junction MOSFET

Full PDF Text Transcription

Click to expand full text
PFP65R900 / PFF65R900 PFP65R900 / PFF65R900 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) BVDSS = 650 V RDS(on) = 0.78 Ω ID = 5.0 A TO-220 G DS Drain  Gate  ● ◀▲ ● ●  Source TO-220F G DS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP65R9 00 PFF65R9 00 VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25℃) Drain Current – Continuous (TC = 100℃) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 650 5.
Published: |