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PFP60R360 - N-Channel Super Junction MOSFET

Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS.

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Datasheet Details

Part number PFP60R360
Manufacturer Wing On
File Size 644.77 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFP60R360 Datasheet

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Full PDF Text Transcription

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PFP60R360 / PFF60R360 PFP60R360 / PFF60R360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) BVDSS = 600 V RDS(on) = 0.30 Ω ID = 11.0 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-220F G DS G DS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP60R360 PFF60R360 VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25℃) Drain Current – Continuous (TC = 100℃) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 600 11.
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