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PFP50R150 - N-Channel Super Junction MOSFET

Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 500 V RDS(on) = 0.13Ω ID = 22.5 A Drain  Gate .
  • ◀▲.
  •  Source.

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Datasheet Details

Part number PFP50R150
Manufacturer Wing On
File Size 894.30 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFP50R150 Datasheet

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Full PDF Text Transcription

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PFP50R150 / PFF50R150 PFP50R150 / PFF50R150 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 500 V RDS(on) = 0.13Ω ID = 22.5 A Drain  Gate  ● ◀▲ ● ●  Source APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) TO-220 G DS TO-220F G DS Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter PFP50R150 PFF50R150 VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25oC) Drain Current – Continuous (TC = 100oC) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 500 22.5 22.
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