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PFM1N70 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.8 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 11.5 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFM1N70
Manufacturer Wing On
File Size 903.60 KB
Description N-Channel MOSFET
Datasheet download datasheet PFM1N70 Datasheet

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Full PDF Text Transcription

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Nov 2008 PFM1N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.8 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 11.5 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFM1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 11.5 Ω ID = 0.8* A Drain  Gate  ● ◀▲ ● ●  Source TO-92 12 3 1.Gate 2. Drain 3.
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