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PFF70R590 - N-Channel Super Junction MOSFET

Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 700 V RDS(on) = 0.52Ω ID = 8.0 A Drain  Gate .
  • ◀▲.
  •  Source.

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Datasheet Details

Part number PFF70R590
Manufacturer Wing On
File Size 905.84 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFF70R590 Datasheet

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Full PDF Text Transcription

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PFP70R590 / PFF70R590 PFP70R590 / PFF70R590 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 700 V RDS(on) = 0.52Ω ID = 8.0 A Drain  Gate  ● ◀▲ ● ●  Source APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) TO-220 G DS TO-220F G DS Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter PFP70R590 PFF70R590 VDS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25oC) ID Drain Current – Continuous (TC = 100oC) 700 8.0 8.0* 5.0 5.
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