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PFD1N60 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 8.3 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFD1N60
Manufacturer Wing On
File Size 960.82 KB
Description N-Channel MOSFET
Datasheet download datasheet PFD1N60 Datasheet

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Full PDF Text Transcription

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Aug 2006 PFU1N60 / PFD1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 8.3 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFU1N60/PFD1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 10.5 Ω ID = 1.0 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source D-PAK(TO-252) 2 1 3 1.Gate 2. Drain 3.
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