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W957D6HB - A/D MUX

General Description

Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications.

The device has a DRAM core organized.

Key Features

  • Supports asynchronous and burst operations.
  • VCC, VCCQ Voltages: 1.7V.
  • 1.95V VCC 1.7V.
  • 1.95V VCCQ.
  • Random access time: 70ns.
  • Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns).
  • Low power consumption: Asynchronous READ:.

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Other Datasheets by Winbond

Part Number Description
W957D8MFYA 128Mb HyperRAM
W957A8MFYA 128Mb HyperRAM
W956A8MBYA 64Mb HyperRAM
W956D6HB A/D MUX
W956D6KBKX 64Mb Async/Burst/Sync A/D MUX
W956D8MBYA 64Mb HyperRAM
W956K6HB A/D MUX
W958D6DB A/D MUX
W958D8NBYA 256Mb HyperRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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W957D6HB 1. GENERAL DESCRIPTION 128Mb Async./Burst/Sync./A/D MUX Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality dramatically reduce the required signal count, and increase READ/WRITE bandwidth. For seamless operation on a burst Flash bus, Winbond x16 ADMUX products incorporate a transparent self-refresh mechanism. The hidden refresh requires no additional support from the system memory controller and has no significant impact on device READ/WRITE performance.