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29EE011 - W29EE011

Description

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits.

The www.DataSheet4U.com device can be programmed and erased in-system with a standard 5V power supply.

A 12-volt VPP is not required.

Features

  • Single 5-volt program and erase operations Fast page-write operations.
  • 128 bytes per page.
  • Page program cycle: 10 mS (max. ).
  • Effective byte-program cycle time: 39 µS.
  • Optional software-protected data write.
  • Low power consumption.
  • Active current: 25 mA (typ. ).
  • Standby current: 20 µA (typ. ).
  • Automatic program timing with internal VPP generation End of program detection.
  • Toggle bit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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W29EE011 128K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The www.DataSheet4U.com device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • • Single 5-volt program and erase operations Fast page-write operations − 128 bytes per page − Page program cycle: 10 mS (max.
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