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WNM3062A - 30V 18.5A Single N-Channel Power MOSFET

General Description

The WNM3062A is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • DFN2X2-6L D D S 6 5 4 D S 1 2 3 D D G Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Low ON resistance.
  • Package DFN2X2-6L.

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Datasheet Details

Part number WNM3062A
Manufacturer Will Semiconductor
File Size 488.76 KB
Description 30V 18.5A Single N-Channel Power MOSFET
Datasheet download datasheet WNM3062A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3062A WNM3062A Single N-Channel, 30V, 18.5A, Power MOSFET http://www.omnivision-group.com/ VDS (V) 30 Max. RDS(on) (mΩ) 6.0 @ VGS=10V 9.0 @ VGS=4.5V Description The WNM3062A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3062A is in compliance with RoHS.