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WNM3013 - N-Channel MOSFET

General Description

The WNM3013 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in small signal switch.

Standard product WNM3013 is Pb-free.

Key Features

  • z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-723 12 GS Pin Configuration 3 KN 12 KN = Device Code.

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Datasheet Details

Part number WNM3013
Manufacturer Will Semiconductor
File Size 136.32 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM3013 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3013 Small Signal N-Channel, 30V, 0.10A, MOSFET WNM3013 Http://www.willsemi.com Descriptions The WNM3013 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product WNM3013 is Pb-free.