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WGF18N65 - 650V N-Channel MOSFET

Key Features

  • Low Intrinsic Capacitances .
  • Excellent Switching Characteristics .
  • Extended Safe Operating Area .
  • Unrivalled Gate Charge :Qg= 50nC (Typ. ).
  • BVDSS=650V,ID=18A.
  • RDS(on) :0.42 Ω (Max) @VG=10V.
  • 100% Avalanche Tested   GD S G! D !.
  • ◀▲.
  • ! S   TO‐220F    G‐Gate,D‐Drain,S‐Sourse  Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Curr.

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Datasheet Details

Part number WGF18N65
Manufacturer WildGoose
File Size 1.86 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet WGF18N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH VOLTAGE N-Channel MOSFET      WGF18 N65 65 0V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 50nC (Typ.) □ BVDSS=650V,ID=18A □ RDS(on) :0.