C1815LT1
FEATURES
Power dissipation PCM: 0.2 W (Tamb=25 )
1. 0
TRANSISTOR (NPN)
- “G” Lead(Pb)-Free
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150
2. 4 1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO h FE(1) VCE(sat) VBE(sat) unless otherwise specified)
Test conditions MIN 60 50 0.1 0.1 0.1 130 400 0.25 1 V V TYP MAX UNIT V V
Ic= 100µA, IE=0 Ic = 0.1m A, IB =0 VCB=60V, IE=0 VCE=50V, IB=0 VEB= 5V, IC=0 VCE= 6V, IC= 2m A IC=100 m A, IB= 10m A IC=100 m A, IB= 10m A VCE=10V, IC= 1m A
0. 4
µA µA µA
Transition frequency f T f=30MHz
MHz
CLASSIFICATION OF h...
