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WSJM65R170Y - Super-Junction Power MOSFET

General Description

WSJM65R170Y is a high voltage N-channel MOSFET in IITO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)

Qg among silicon based MOSFETs.

It is particularly suitable for applications require extreme high efficiency and power density.

Key Features

  • Superior FOM RDS(on).
  • Qg.
  • Extremely low switching loss.
  • 100% avalanche tested.
  • Internally insulated package with isolated mounting base 3.

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Datasheet Details

Part number WSJM65R170Y
Manufacturer WeEn
File Size 599.49 KB
Description Super-Junction Power MOSFET
Datasheet download datasheet WSJM65R170Y Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WSJM65R170Y Super-Junction Power MOSFET Rev.01 - 22 October 2024 Product data sheet 1. General description WSJM65R170Y is a high voltage N-channel MOSFET in IITO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density. RoHS halogen-Free 2. Features and benefits • Superior FOM RDS(on) * Qg • Extremely low switching loss • 100% avalanche tested • Internally insulated package with isolated mounting base 3. Applications • Server power • LEV charger • LED power • Adapters 4. Quick reference data Table 1.