• Part: WN3S3060D
  • Description: Power Schottky diode
  • Category: Diode
  • Manufacturer: WeEn
  • Size: 456.54 KB
Download WN3S3060D Datasheet PDF
WeEn
WN3S3060D
description Power Schottky diode in TO252 (DPAK) surface-mountable plastic package. h Ro HS alogen-Free 2. Features and benefits - Trench structure - High junction temperature up to 150°C - Low forward voltage drop, negligible switching losses - High efficiency 3. Applications - DC to DC converters - Freewheeling diode - OR-ing diode - Switched mode power supply rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current Symbol Parameter Static characteristics VF forward voltage IR reverse current Conditions δ = 0.5 ; square-wave pulse; Tmb ≤ 90 °C; Fig. 1; Fig. 2; Fig. 3 Conditions IF = 30 A; Tj = 25 °C; Fig. 6 VR = 60 V; Tj = 25 °C Notes Notes Min - Values 60 30 Typ Max 0.78 0.85 30 200 Unit V A Unit V μA We En Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description A...