• Part: WN3S30200DT
  • Description: Power Schottky diode
  • Category: Diode
  • Manufacturer: WeEn
  • Size: 396.62 KB
Download WN3S30200DT Datasheet PDF
WeEn
WN3S30200DT
description Power Schottky diode in TO252 (DPAK) surface-mountable plastic package. h Ro HS alogen-Free 2. Features and benefits - High junction temperature up to 175°C - Low forward voltage drop, negligible switching losses - High efficiency 3. Applications - DC to DC converters - Freewheeling diode - OR-ing diode - Switched mode power supply rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Notes Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 145 °C; Fig. 1; Fig. 2; Fig. 3 Symbol Parameter Conditions Notes Min Static characteristics Values 200 30 Typ Max Unit V A Unit VF forward voltage IR reverse current IF = 30 A; Tj = 25 °C; Fig. 6 VR = 200 V; Tj = 25 °C - 0.93 1.03 V - 0.1 5 μA We En Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description A anode K...