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WMS30N1200SK - N-Channel Silicon MOSFET

General Description

WMS30N1200SK is a high performance super logic level N-channel MOSFET in SOT23 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge.

It is designed and qualified in a wide range of industrial and consumer applications.

2.

Key Features

  • High ESD sensitivity devices.
  • Advance High Cell Density Trench Technology.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Switching Losses.
  • Optimized Gate Charge to Minimize Driver Losses.
  • RoHS Compliant, Halogen Free and Lead Free 3.

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Datasheet Details

Part number WMS30N1200SK
Manufacturer WeEn
File Size 561.70 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet WMS30N1200SK Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WMS30N1200SK N-Channel Silicon MOSFET Rev.02 - 18 June 2024 Product data sheet 1. General description WMS30N1200SK is a high performance super logic level N-channel MOSFET in SOT23 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. h RoHS alogen-Free Lead-Free 2. Features and benefits • High ESD sensitivity devices • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • RoHS Compliant, Halogen Free and Lead Free 3. Applications • Load Switch • General PWM Applications 4. Quick reference data Table 1.