WG75N65UFW1 - IGBT

WeEn

General Description

WG75N65UFW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO-247 package to provide extremely low Vce(sat), and excellent switching performance.

This device is ideal for wide range switching frequency converters.

Key Features

Maximum junction temperature 175 °C.
Positive temperature efficient for easy paralleling.
Very soft, fast recovery anti-parallel diode.
High speed switching.
EMI improved design 3.

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Datasheet Details

Part number	WG75N65UFW1
Manufacturer	WeEn
File Size	931.29 KB
Description	IGBT
Datasheet	WG75N65UFW1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WG75N65UFW1 IGBT Rev.01 - 23 March 2024 Product data sheet 1. General description WG75N65UFW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO-247 package to provide extremely low Vce(sat), and excellent switching performance. This device is ideal for wide range switching frequency converters. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive temperature efficient for easy paralleling • Very soft, fast recovery anti-parallel diode • High speed switching • EMI improved design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.