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WG60N65MFW1 - IGBT

General Description

WG60N65MFW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO-247 package to provide extremely low Vce(sat), and excellent switching performance.

This device offers Best-in-Class efficiency in hard switching and resonant topology.

2.

Key Features

  • Maximum junction temperature 175 °C.
  • Positive Temperature efficient for Easy Parallel Operating.
  • Very soft, fast recovery anti-parallel diode.
  • Smooth & Optimized switching.
  • EMI Improved Design 3.

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WG60N65MFW1 IGBT Rev.01 - 31 January 2024 Product data sheet 1. General description WG60N65MFW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO-247 package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive Temperature efficient for Easy Parallel Operating • Very soft, fast recovery anti-parallel diode • Smooth & Optimized switching • EMI Improved Design 3. Applications • Motor control • PFC • UPS • Resonant converters • Mid to high switching frequency applications 4. Quick reference data Table 1.